Abstract
Field emission characteristics of ultra-nanocrystalline diamond (UNCD) have recently caught much attraction due to its importance in technological applications. In this work, we have fabricated lateral-field emitters comprised of UNCD films, which were deposited in CH 4/Ar medium by microwave plasma-enhanced chemical vapor deposition method. The substrates, silicon-on-insulator (SOI) or SiO 2-coated silicon, were pre-treated by mixed-powders-ultrasonication process for forming diamond nuclei to facilitate the synthesis of UNCD films on these substrates. Lateral electron field emitters can thus be fabricated either on silicon-on-insulator (SOI) or silicon substrates. The lateral emitters thus obtained possess large field enhancement factor ( β = 1500–1721) and exhibit good electron field emission properties, regardless of the substrate materials used. The electron field emission can be turned on at 5.25–5.50 V/μm, attaining 5500–6000 mA/mm 2 at 12.5 V/μm (100 V applied voltage).
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
