Abstract

In this paper, surface-conduction field emission (SCFE) device based on planar-gate triode with in-situ grown ZnO nanorods as the emitter has been fabricated. The ZnO nanorods are controlled to orientable grow by thermal evaporation on a substrate, and their microstructures are analyzed through XRD and SEM. The results show that the one-dimensional ZnO nanorods were rod-shaped, up to 200 nm in diameter and approximately 15 μm in length. They are of oriental growth, uniform in size and perpendicular to the substrate. With the screen-printing, a planar-gate surface conduction device is fabricated, and its field emission characteristics are tested. The test results indicate that the threshold voltage of the planar-gate ZnO-SCFE device decreases with the increase of the anode voltage. When the gate voltage is 62 V, the electron emission efficiency of the device is 36.1%, higher than the reported surface emission display (SED) emission efficiency. Besides, the proposed device has good modulated effect and stability, indicating that it is of good field emission characteristics.

Highlights

  • Surface-Conduction Electron-Emission (SCE) was discovered by scientists of the Soviet Union in the 1960s.1 To achieve surface conduction, it deposits a thin tin oxide film between two parallel electrodes, and the film exhibits a discontinuous particle state

  • In this paper, surface-conduction field emission (SCFE) device based on planar-gate triode with in-situ grown Zinc oxide (ZnO) nanorods as the emitter has been fabricated

  • The ZnO nanorods are controlled to orientable grow by thermal evaporation on a substrate, and their microstructures are analyzed through XRD and SEM

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Summary

INTRODUCTION

Surface-Conduction Electron-Emission (SCE) was discovered by scientists of the Soviet Union in the 1960s.1 To achieve surface conduction, it deposits a thin tin oxide film between two parallel electrodes, and the film exhibits a discontinuous particle state. In 2002, Lee et al. first studied the field emission properties of zinc oxide nanowires. They found that to get 0.1 μA/cm current density, it requires an approximately 6.0 V/μm applied electric field, and 1 mA/cm current density requires an 11.0 V/μm applied electric field. With the deepening of research, it has been found that ordered zinc oxide nanomaterials can effectively improve field emission properties.. Researchers have developed a variety of methods for fabricating one-dimensional zinc oxide nanomaterials with ordering growth, such as chemical vapor deposition, molecular beam epitaxy, thermal evaporation and chemical solutions. We fabricated the planar-gate ZnO surface-conducted field emission cathode and studied its field emission performance

Fabrication of ZnO-SCFE cathode
Structure of the experimental device
AND DISCUSSION
CONCLUSION
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