Abstract
AbstractIn this study, suspended micro‐heater using TiN for decreasing power dissipation was fabricated and evaluated. The self‐supporting film of the suspended filament was developed by the low compressive stress SiO2 film deposited by the dc reactive sputtering method with rf substrate bias and the post annealing at 900°C. In the suspended structure process, single photolithography process and two wet etching process of HF and KOH solution were used. The power dissipation of the suspended heaters was obtained about 70 mW and it is indicated that the power dissipation is able to reduce than the other structure in previous research. Then, it is expected that the TiN micro‐heater using suspended structure is applicable to several MEMS sensors.
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