Abstract
The metal-oxide-semiconductor (MOS) transistor probe with the focused-ion-beam (FIB) nano tip is fabricated and evaluated for the surface electric properties. The high working speed and the high sensitivity of the MOS transistor improve the scanning speed and the system minimization. The device is fabricated with the standard CMOS process and FIB nano deposition. The device is applied to the patterned sample plate, and the measuring result shows the well defined line patterns.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
