Abstract
Based on the concept of functionally goaded materials, the thermoelectric conversion unit of SiGe with gaded electrodes was designed and fabricated by HIP sintering process in order to obtain a good electrical and mechanical contact. The composite of Si and MoSi2 was used as the electrode, and the effect of the MoSi2 volume fraction on the electrical resistivity was studied. The results show that the electrical resistivity decreases exponentially with increasing MoSi2 content and reaches the order of 10-4 Ω·cm when the volume fraction of MoSi2 was beyond 25%. The graded (Si-MoSi2) /SiGe obtained has dense microstructures and well bonded interfaces. The electrical resistivity continuously decreased from the SiGe to the surface electrode in the zone of gaded structure.
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