Abstract
Graphene has outstanding electrical properties such as high carrier mobility and large operation current density due to it’s unique two-dimensional carbon honeycomb lattice structure. However, the carrier mobility and on/off ratio in current of traditional silicon-integrated graphene devices are largely limited due to the substrate-induced scattering effect. Exploring new device structure to prepare graphene devices is an important way to improve their performance. In this work, we propose a new fabricate technique for suspended Graphene/hBN van der Waals heterostructure device with high vield. Combined with improved transfer technology, it greatly improves the probability of successful suspending graphene devices, and we found that the Dirac point of the suspended graphene device is located in nearly zero gate voltage, which reduced the doping in graphene effectively, and further proved the advantages of our device structure in fabricating suspended devices.
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