Abstract
The n-ZnO nanorods/p-Si nanowires heterojunction was fabricated by chemical method. The microstructure of the epitaxially grown ZnO nanorod was characterized by scanning electron microscopy, X-ray diffraction and transmission electron microscopy. The photoluminescence of the nanostructure showed a typical UV emission band and a defect-related emission band. Further, the electroluminescence of the nanostructure were measured, and the mechanism was discussed based on the band diagram of the n-ZnO nanorods/p-Si nanowires heterojunction.
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