Abstract
Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. In addition, we find that the MoS2 nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 105, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS2 nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS2 FETs.
Highlights
The structure of molybdenum disulfide (MoS2), a layered transition metal dichalcogenide (TMD), comprises S-Mo-S in a hexagonal close-packed arrangement
MoS2 nanodiscs were deposited via chemical vapor deposition (CVD) on n-type silicon (111) substrates covered with a 280-nm SiO2 layer
The MoS2 nanodiscs are round and flat, with a diameter of 100 nm and a thickness of around 5 nm, which is equal to the thickness of a few MoS2 layers
Summary
The structure of molybdenum disulfide (MoS2), a layered transition metal dichalcogenide (TMD), comprises S-Mo-S in a hexagonal close-packed arrangement. Similar to extracting graphene from graphite [1], bulk MoS2 is split into single-layer (SL) or few-layer (FL) MoS2 sheets. Single and multilayer MoS2 have a larger bandgap [2,3,4,5,6]. The presence of a large bandgap makes MoS2 more attractive than gapless graphene for logic circuits and amplifier devices. Single and multilayer MoS2 field effect transistors (FETs) have been prepared with on/off current ratio exceeding 108 at room temperature, effective mobility as high as 700 cm2/Vs and steep subthreshold swing (74 mV/decade) [7,8,9,10,11,12,13]. MoS2 shows great promise for optoelectronics [14,15] and energy harvesting [16,17] and other nanoelectronic applications
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