Abstract
In order to improve the device structure from the standpoint of determining more clearly current path and each junction area, we have fabricated In/(Ba,Rb)BiO3/SrTiO3(Nb) three terminal device using BaBiO3 thin film as an insulator between (Ba,Rb)BiO3 thin film and SrTiO3(Nb) substrate. (Ba,Rb)BiO3 and BaBiO3 thin films were prepared by molecular beam epitaxy method using distilled ozone. Quality of (Ba,Rb)BiO3 on BaBiO3 thin film was good as a result of X-ray diffraction measurement. The most favorable etching method for BaBiO3 thin film was wet etching using HCl. We have measured electrical properties and clarified electrical path of the three terminal device with improved structure. In the case of base common, current flowed through (Ba,Rb)BiO3 base under In deposit area.
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