Abstract
Highly oriented Bi2-xSbxTe3 (x = 0, 0.7, 1.1, 1.5, 2) ternary nanocrystalline films were fabricated using vacuum thermal evaporation method. Microstructures and morphologies indicate that Bi2-xSbxTe3 films have pure rhombohedral phase with well-ordered nanopillars array. Bi, Sb and Te atoms uniformly distributed throughtout films with no precipitation. Electrical conductivity of Bi2-xSbxTe3 films transforms from n-type to p-type when x > 1.1. Metal-insulator transition was observed due to the incorporation of Sb in Bi2Te3. Bi2-xSbxTe3 film with x = 1.5 exhibits optimized electrical properties with maximum electrical conductivity σ of 2.95 × 105 S m−1 at T = 300 K, which is approximately ten times higher than that of the undoped Bi2Te3 film, and three times higher than previous report for Bi0.5Sb1.5Te3 films and bulk materials. The maximum power factor PF of Bi0.5Sb1.5Te3 nanopillars array film is about 3.83 μW cm−1 K−2 at T = 475 K. Highly oriented (Bi,Sb)2Te3 nanocrystalline films with tuned electronic transport properties have potentials in thermoelectric devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
