Abstract
Semiconducting thin films of p-ZnIn2Se4 were deposited on a crystalline n-silicon (Si) substrate by a flash evaporation technique. A heterojunction diode comprising of Au/p-ZnIn2Se4/n-Si/Al structure was fabricated. The heterojunction was subjected to current (I)–voltage (V) and capacitance (C)–voltage (V) characterization. The p-ZnIn2Se4/n-Si heterojunction showed behaviour typical of a p-n junction diode. The heterojunction diode ideality factor, rectification ratio, barrier height and carrier concentration were determined from the I–V and C–V measurements. At lower applied voltages, the electrical conduction was found to take place by thermionic emission whereas at higher voltages, a space charge-limited conduction mechanism was observed. A theoretical energy band diagram was constructed for the fabricated p-ZnIn2Se4/n-Si heterojunction on the basis of Anderson’s model. The photovoltaic behaviour of the fabricated heterojunction was also investigated and the results were reported.
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