Abstract
One of the greatest challenges facing GaN devices has been efficient p-type doping. Beryllium is a promising dopant for obtaining p-type conductivity in GaN. An investigation has been made into ionizing Be acceptors in AlGaN devices that has varying levels of Be implantation. The AlGaN samples had MSM structures placed on the doped surface in order to measure electrical characteristics. I-V characteristics were measured at room temperature without optical pumping. Future measurements with optical pumping through the use of a YAG IR laser are planned.
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