Fabrication and Electrical Characteristics of Metal–Ferroelectric–Semiconductor Field Effect Transistor Based on Poly(vinylidene fluoride)

Abstract

We fabricated the metal–ferroelectric–semiconductor field effect transistor (MFSFET) using poly(vinylidene fluoride) (PVDF) thin film as a ferroelectric layer. PVDF thin films were prepared by spin-coating PVDF solutions of 2–6 wt % on Si(100) wafers with source and drain diffusion regions. The drain current–gate voltage (ID–VG) characteristics of MFSFET exhibited ferroelectric hysteretic curves inducing a counterclockwise loop similar to that of other ferroelectric materials. It seems that the deposited PVDF films were crystallized with the ferroelectric β phase. The memory window widths of the MFSFET were more than 1.0 V. The drain current–drain voltage (ID–VD) characteristics show that the MFSFET operates with the PVDF thin film used as a gate dielectric material. The MFSFET using PVDF as ferroelectric layer has promising potential for use in low-voltage operable one-transistor (1T)-type ferroelectric random access memories (FeRAMs) using organic material.