Abstract
We have developed a new multi-layer structure of polycrystalline silicon field emitter array (poly-Si FEA) and thin film transistor (TFT), where poly-Si FEA and the TFT are successively fabricated using a thermally grown SiO2 mold and transferred to a glass substrate. During operation, the TFT not only controls amount of field emission but also stabilizes fluctuation of the field emission. Since the TFT does not decrease the space for poly-Si FEA fabrication, the structure will be a good candidate for high quality flat panel displays. In this paper, we present details of the fabrication method of the multi-layer structure, and also show the field emission control by the TFT for static and switching characteistics.
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