Fabrication and electrical characterisation of Zr-substituted BaTiO3 thin films

Abstract

Thin films of zirconium-substituted barium titanate were deposited by chemical solution deposition on platinum-coated silicon substrates at a temperature of 700 °C. The films showed a polycrystalline perovskite structure. The grain size was found to decrease with increase of Zr substitution. The effect of Zr substitution on the dielectric constant and the leakage was studied. It was found that with increasing Zr content the phase transition becomes diffuse and relaxor-like. The dielectric constant was also found to decrease with increasing amounts of Zr after an initial increase. The hysteresis loops became thinner and the remanent polarisation was found to decrease. The leakage behaviour was explained by Schottky theory. The barrier heights of the different films were calculated and found to vary between 1.12 eV and 1.19 eV.