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Abstract
We report the fabrication and dc, microwave characteristics of 0.1 μm, Schottky-collector resonant tunnel diodes (SRTDs) in the AlAs/In0.53Ga0.47As/InP material system. Devices with contact areas as small as 0.05 μm2 have been fabricated using electron beam lithography with an interrupted footprint T-gate process. SRTD’s fabricated with 1.4 nm AlAs barriers exhibited a 5×105 A/cm2 peak current density at 0.95 V and a −19 mS/μm2 peak negative conductance. The devices incorporate fully depleted P-doped cap layers to suppress surface leakage currents. From the measured dc and microwave characteristics, a maximum frequency of oscillation fmax=2.2 THz is estimated.
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