Fabrication and current-voltage characteristics of Mo1 − xWxS2/graphene oxide heterojunction diode

Abstract

Tungsten-substituted molybdenum disulfide (Mo1−xWxS2) shows excellent semiconductor properties related to the adjustable band gap structure. Mo1−xWxS2 is an n-type semiconductor that has high carrier mobility, adjustable electrical characteristics. Graphene, the thinnest two-dimensional material, shows good thermal conductivity and high carrier mobility. The oxygen adsorption effects of graphene permit precise control of its Fermi level and semiconductor properties. We combined Mo1−xWxS2 films with graphene oxide (GO) in this study to fabricate a pn interface and thoroughly research the energy band and electrical properties for a heterojunction diode. According to the results, the Mo1−xWxS2 electron affinity decreases with increasing x value of tungsten (W) composition (x=0.0–1.0, Δx=0.2). The I–V characteristics of the Mo1−xWxS2/GO heterojunction diodes can be accurately tuned by conduction band bowing effect with different W composition of the Mo1−xWxS2 films. By applying our fabricating method, the Mo1−xWxS2 with different W composition provides a new application of semiconductor device. In this study we using Mo1−xWxS2 films and GO to fabricate a heterojunction diode, it shows different electrical properties with different x value of Mo1−xWxS2. The Mo1−xWxS2 electron affinity decreases with increasing of W composition x value (x=0.0–1.0, Δx=0.2). The Mo1−xWxS2/GO heterojunction diode I–V characteristics can be accurately tuned using the conduction band bowing effect with different W compositions. Mo1−xWxS2 with different W compositions using our fabrication method provides new semiconductor device applications.