Abstract
In this work, the sol–gel method used to fabricate zinc oxide (ZnO) thin film on silicon (Si) substrate. To this purpose, zinc acetate dihydrate and monoethanolamine were used as solvent and stabilizer materials respectively. Structural and optical properties of ZnO films were studied. X-ray diffraction (XRD) analysis of the films showed polycrystalline nature of the prepared films. Depend on XRD peak of ZnO film with orientation (100), therefore, Scherrer's formula was used to calculate crystallite size of prepared films. Scanning electron microscopy (SEM) used to describe the surface morphology and Photoluminescence (PL) measurements revealed the energy bandgap of the films was in UV emission at 380nm. Finally, thickness of the films was measured with Filmetric (F-20). The result showed that we successful to fabricate ZnO films in simple and low cost method with high quality.
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