Abstract
AbstractThe fabrication, characterization, and performance of wafer-bonded (WB) GaInAsSb thermophotovoltaic (TPV) devices for monolithically series-interconnected cells are reported. TPV epilayers were bonded to GaAs handle wafers with SiOx/Ti/Au. This dielectric/metal layer is multi-functional in that it is used as the adhesive to bond the epilayers; it provides electrical isolation; and it is an internal back surface reflector. Considerations were made to minimize residual stress and provide high reflectivity. Excellent structural and optical properties of WB TPV structures are observed. The external quantum efficiency of WB and unbonded TPV cells is comparable. TPV cells were monolithically series interconnected, and a 10-junction device exhibited linear voltage building with an open-circuit voltage of 1.8 V.
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