Abstract
Gas sensor using GaN film has been proposed on silicon substrate by sol gel spin coating technique with parameters growth temperature of 850°C, spinner rate of 1000 rpm, Ga2O3 molarity of 1.33 M and N sources derived from nitrogen gas at a flow rate of 100 sccm. From the results of testing the electrical properties of the gas environment type volatile organic compound, especially hydrogen gas turns electric resistance GaN semiconductor thin films declined sharply from 1.5 x 10-2 to 7 x 10-3 Ohm.cm. The GaN thin film not only exhibited good sensitivity to hydrogen gas but also showed good linearity in the characteristic of the sensitivity to hydrogen gas concentration.
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