Fabrication and characterization of thin-film transistors with SnO2 channel by spray pyrolysis

Abstract

Bottom-gate thin-film transistors with a SnO2 channel layer were fabricated on thermally oxidized silicon wafer. SnO2 films were deposited by a simple and low-cost spray pyrolysis technique with stannic chloride as the precursor. The films were structurally characterized by X-ray diffraction (XRD) analysis and scanning electron microscopy (SEM). The results revealed that the thin films were amorphous in nature. Electrical measurement revealed that the devices exhibited excellent saturation and pinch-off characteristics. The saturation mobility of about 0.37 cm2 V−1 s−1, current on–off ratio of 106, threshold voltage of −2 V, and subthreshold voltage swing of 2 V/dec have been determined.