Abstract
In this study, we successfully fabricate conic diamond field emitter array devices by applying an IC process capable of forming a metal-insulator-semiconductor (MIS) diode structure. The conic diamonds are selectively deposited and, ultimately, grow inside of the electric gates. In addition, the field emission current is measured when applying +1000 V voltage on the anode in which the applied gate voltage is varied from 0 to 50 volts. Experimental results indicate that the threshold voltage of this device is about 12 V, and the field emission current is about 40 µA when the gate voltage is 30 V. Furthermore, current–voltage (I–V) characterization of the electrical properties demonstrates that the reason for the change of the threshold voltage of conic diamond field emission arrays (FEAs) fabricated under different CH4 concentration may be attributed to the diamond tip radius.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
