Abstract
Present work demonstrates the vertically double stacked nanosheet (NS) p-channel polycrystalline silicon (poly-Si) junctionless field-effect transistors (JL-FET) with tri-gate, omega-gate, and gate all around (GAA) structure. These structures offer more W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">eff</sub> per existing footprint and better parallel resistance, resulting in smaller total resistance. Also, the GAA stacked NS device shows superior electrical properties, including high Ion/Ioff ratio (> 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">8</sup> ), steep subthreshold swing (SS) = 100 mV/dec, very low drain-induced-barrier-lowering (DIBL) = 0.127 mV/V and usually off at Vg = 0 V, owing to superior gate controllability. More, the 3D TCAD simulation has applied for analysis of physical characteristics of the proposed devices.
Highlights
Under the rapid growth of the electronics industry based on the evolution of integrated-circuit (IC) technology to provide improvements in cost per function as well as performance
Junctionless field-effect transistors (JL-fieldeffect transistor (FET)) with high and uniform doping in channel and source/drain regions have much attraction [5]–[11]
JL-FET can avoid complex source and drain doping engineering, has a low thermal budget for flexible high-k metal gate adoption and it is integrated for 3D IC and NAND
Summary
Under the rapid growth of the electronics industry based on the evolution of integrated-circuit (IC) technology to provide improvements in cost per function as well as performance. The gate-all-around (GAA)-based nanosheets have the strongest gate controllability to lower the leakage current. DEVICE FABRICATION Fig. 2 shows the process flows and the schematic diagram of vertically double stacked NS JL-FET with multi-gate TRI-GATE AND OMEGA-GATE Fig. 3 (a) shows the cross-sectional transmission electron microscopy (TEM) image of the stacked NS JL-FET with tri-gate structure.
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