Fabrication and characterization of SOA and phase shifter integrated interferometer all-optical switches by single-step GaInAsP/InP selective area MOVPE

D Miyashita,Xueliang Song Xueliang Song,Y Nakano,N Futakuchi,Zhenrui Zhang Zhenrui Zhang

doi:10.1109/iciprm.2003.1205375

Fabrication and characterization of SOA and phase shifter integrated interferometer all-optical switches by single-step GaInAsP/InP selective area MOVPE

D Miyashita, Xueliang Song Xueliang Song + Show 3 more

https://doi.org/10.1109/iciprm.2003.1205375

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Publication Date: May 12, 2003

Citations: 4

Affiliation: The University of Tokyo

#Selective Area Growth #All-optical Switches + Show 8 more

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Abstract

Simple, high-yield fabrication of GaInAsP/InP Mach-Zehnder and Michelson interferometer-based all-optical switches, integrated with semiconductor optical amplifiers (SOAs) and phase shifters, has been made possible by one-step MOVPE selective area growth (SAG). The SAG method yields smooth junction between the active and passive regions of the all-optical switches. Static all-optical switching performance includes 24dB extinction ratio and 6/spl pi/ phase shift by 18dBm. By utilizing integrated phase shifters, we could also calibrate the extinction ratio.

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