Fabrication and characterization of SiO2 based waveguide co-doped withSi-nanocrystal and Er3+

Abstract

[ <TEX>$SiO_2$</TEX> ]thin films containing Si-nanocrystals and <TEX>$Er^{3+}$</TEX> were fabricated by the RF-sputtering method. Intense emission of <TEX>$Er^{3+}$</TEX> was observed at 1530 nm region after the annealing of the film at <TEX>$1050^{circ}C$</TEX> for 5 min. Channel waveguides were fabricated using such films for the core. The films containing Si higher than 2.4 at% exhibited the change in stress from compression to tension after annealing, which induced the fatal loss-increase in waveguide. The optical gain might be attained by the Er-doped waveguide with Si lower than 2.4 at% by a visible-light-excitation.