Abstract
In this study, we report that the metal Cu deposited on a glass substrate is formed into a stable p-type Cu2O film with excellent properties through rapid thermal oxidation (RTO). The pre-deposited Cu film layer went through thermal oxidation in the temperature range of 200–500 °C in O2 and air ambient, and the electrical and optical properties were intensively investigated. The optimized p-type Cu2O film heat-treated at a temperature of 200 °C in an air ambient has a carrier concentration of 1.25×1017 cm-3, mobility of 0.51 cm2 V-1 s-1, and resistivity of 9.86 Ω cm; its optical band gap reaches about 2.4 eV. Using the p-type Cu2O film with i- and n-type amorphous silicon layers, heterojunction thin-film solar cells were fabricated on glass substrates. These transparent solar cells employed Ga-doped ZnO films as top and bottom electrodes. Solar cells with Cu2O film oxidized at 200 °C in an air ambient have an open circuit voltage of 0.36 V, short-circuit current of 15.2 mA/cm2, and photoelectric conversion efficiency of 1.98%.
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