Abstract
We are developing microelectronic terahertz rectifiers by scaling down the dimensions of GaAs Schottky diodes and field-effect transistors to the sub-micron range, and by investigating the effect of on-chip parasitic capacitances on the square-law power detection signal. For broadband operation at THz frequencies the terahertz oscillating signal is fed to the device by integrated lithographic planar antennas, suitably coupled to a silicon substrate lens. Such room-temperature THz detectors can be fabricated in arrays and naturally provide picosecond response time, suitable for detection of coherent THz radiation produced by single electron bunches in accelerators.
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