Abstract
Phosphorus implantation was applied to the fabrication of mold-type diamond field-emitter arrays (FEAs) for the first time. The fabricated diamond FEAs were structurally and electrically investigated and the results were compared with those of flat diamond films under the same implantation conditions. When the diamond films were implanted after they were grown by microwave-plasma chemical vapor deposition (MPCVD), improved field emission characteristics were obtained. From previous work and these electrical results, it is possible to infer that implanted phosphorus ions collect around the Mo–diamond interface and give rise to enhancement of the field emission properties from Mo to vacuum through diamond.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
