Fabrication and characterization of perovskite CaZrO 3 oxide thin films

Abstract

Perovskite CaZrO 3 oxide thin films were prepared by the sol–gel wet chemical technology to explore the possibility of CaZrO 3 to be used as a gate material for MOSFET application. Calcium acetate, Ca(CH 3COO) 2 and zirconium acetylacetone, [CH 3COCHC(O)CH 3] 4Zr were chosen as precursors, diluted in acetic acid CH 3COOH, then mixed and stirred to get the clear and transparent solution with desired ratio of Ca:Zr = 1:1. The spin-coating technique was then used to deposit perovskite CaZrO 3 oxide thin films on Pt/Ti/SiO 2/Si substrates, the wet films were then pyrolyzed and annealed at different temperatures under O 2 atmosphere. These thin films were systematically characterized using differential thermal analysis (DTA), thermogravimetric analysis (TGA), infrared spectra (IR), X-ray diffraction (XRD), and electrical and dielectric measurements. The high dielectric constant, low leakage current density, and high breakdown strength suggest that CaZrO 3 thin films can be used in high- k applications.