Abstract
Transparent and conducting ZnO and NiO films, deposited by sol-gel spin coating technique, were used for fabrication of p-n junction. These films were characterized by diffraction (XDR), atomic force microscopy (AFM) and UV-visible spectroscopy. XDR shows that NiO films have preferred orientation along the (111) direction, while ZnO films are highly orientated along the (002) direction. The optical transmittance of ZnO and NiO films are 84% and 77% respectively. I-V characteristics of the ZnO- NiO junction show rectification. The junction parameters such as ideality factor, barrier height, and series resistance are determined using conventional farward bias I-V characteristics, and the Cheung method.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
