Abstract
a- and b-axis-oriented (Bi4-xNdx)Ti3O12 (BNT; x = 0.5–1.0) films with 0.3 and 3.0 µm thicknesses, respectively, were fabricated on conductive IrO2(101)/Al2O3(012) substrates at 650 °C by high-temperature sputtering. The BNT films on the IrO2 electrode were preferentially a- and b-axis-oriented. The 3.0-µm BNT samples with x = 0.75–1.0 maintained a stable leakage current density range of 2.8 ×10-10–6.5 ×10-8 A/cm2 in the wide field range of 25–160 kV/cm. The remanent polarization (Pr) exhibited maxima (0.3 µm; 2Pr = 36 µC/cm2, 3.0 µm; 2Pr = 53 µC/cm2) at x = 0.75, regardless of film thickness. It is shown that the samples with x = 0.75–1.0 have relatively superior fatigue endurance due to a firm Bi/Nd–O bonding state formed with increasing Nd substitution.
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