Abstract
The general preparation method of large-area, continuous, uniform, and controllable vdW heterostructure materials is provided in this paper. To obtain the preparation of MoS2/h-BN and WS2/h-BN heterostructures, MoS2 and WS2 material are directly grown on the insulating h-BN substrate by atmospheric pressure chemical vapor deposition (APCVD) method, which does not require any intermediate transfer steps. The test characterization of MoS2/h-BN and WS2/h-BN vdW heterostructure materials can be accomplished by optical microscope, AFM, Raman and PL spectroscopy. The Raman peak signal of h-BN material is stronger when the h-BN film is thicker. Compared to the spectrum of MoS2 or WS2 material on SiO2/Si substrate, the Raman and PL spectrum peak positions of MoS2/h-BN heterostructure are blue-shifted, which is due to the presence of local strain, charged impurities and the vdW heterostructure interaction. Additionally, the PL spectrum of WS2 material shows the strong emission peak at 1.96 eV, while the full width half maximum (FWHM) is only 56 meV. The sharp emission peak indicates that WS2/h-BN heterostructure material has the high crystallinity and clean interface. In addition, the peak position and shape of IPM mode characteristic peak are not obvious, which can be explained by the Van der Waals interaction of WS2/h-BN heterostructure. From the above experimental results, the preparation method of heterostructure material is efficient and scalable, which can provide the important support for the subsequent application of TMDs/h-BN heterostructure in nanoelectronics and optoelectronics.
Highlights
The two-dimensional van der Waals (2D vdWs) heterostructure materials have attracted research interest from researchers, and the controlled stacking of different 2D materials would greatly expand the type and application of heterostructures, which is due to the unique planar structure, excellent electrical and optical properties [1,2]
For the inherent properties exploration of atomic layer materials, hexagonal boron nitride (h-BN) material is used as the most suitable substrate, and the performance can be improved when transition metal dichalcogenides (TMDs) materials are stacked on the insulating h-BN substrate
The TMDs/h-BN vertical heterostructure materials can provide the unique platform, which can explore the unique phenomena of condensed state physical and electrical properties [7,8]
Summary
The two-dimensional van der Waals (2D vdWs) heterostructure materials have attracted research interest from researchers, and the controlled stacking of different 2D materials would greatly expand the type and application of heterostructures, which is due to the unique planar structure, excellent electrical and optical properties [1,2]. The method has a great impact on the properties of heterostructures It is a more scalable and controllable method when 2D layered materials directly grown on another layer of material, which can produce the clean interface [21,22]. During the preparation of vdW heterostructure, 2D h-BN material has the flat surface and charge uniformity, it can achieve a cleaner interface, which is a good ideal insulating substrate [23,24,25]. The above characteristics would facilitate the preparation of TMDs/h-BN vdW heterostructure, which would promote the application of TMDs/h-BN heterostructures in the next-generation optoelectronic devices, flexible electronics, and optoelectronics [26,27]
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