Fabrication and characterization of molecular scale field-effect transistors

Abstract

Molecular electronics are considered one of the most promising ways to meet the challenge of micro-electronics facing its scaling down pathway. Molecular devices, especially molecular scale field-effect transistors (MSFET), are key building blocks for molecular electronics. Three major hurdles to device fabrication are yet to be overcome: electrode pairs must be fabricated with a controllable gap size commensurate with the functional molecule size of interest; the molecules of interest must be arranged between the electrodes with precise location and orientation control; and stable, conducting contacts must be made between the molecules and the electrodes. We have combined “top-down” and “bottom-up” approaches to solve these problems. Using photolithography and molecular lithography with self-assembled mono/multiple molecule layer(s) as a resist, we fabricated electrode structures with a controllable molecular-scale gap between source and drain electrodes and a third terminal of a buried gate. For our device, we synthesized a thiolated phthalocyanine derivative molecule, {di-[1-(S-acetylthio)-4-ethynylphenyl]-di-(tert-butyl)phthalocyanato}copper(II), with acetylthio groups on both ends, conjugated with ethynylphenyl groups. The synthesized end-thiolated molecules were assembled between the tailored molecular gap of the as-fabricated FET electrode structures in solution via Au–S bonding, forming stable contacts between the electrodes and the molecules, and a 3 terminal MSFET device was formed. Electrical measurements show that the device has characteristics of a typical FET device. The field-effect mobility of the as-fabricated MS-FET is 0.16 cm2 V−1 s−1.