Fabrication and Characterization of MIM Diodes Based on Nb/Nb2O5 Via a Rapid Screening Technique

Abstract

Metal–insulator–metal (MIM) structures are gaining signifi cant attention due to their applications in varied electronic devices such as rectennas for energy harvesting, [ 1–4 ] high-frequency detectors/infrared photo-detection, [ 5–7 ] high-frequency mixers, [ 8–10 ] as well as applications in static memory and switching devices. [ 11 , 12 ] Ideally, for most of these applications, the MIM structure should exhibit current–voltage ( I–V ) characteristics with high asymmetry ( f ASYM > 1), strong nonlinearity ( f NL > 3), fast responsivity ( f RES > 7 V − 1 ), low hysteresis and low turn-on voltage (close to zero bias). [ 3 ] Despite the widespread utility and simple architecture of MIM devices, there is a signifi cant lack of understanding as to which materials properties produce the desired device performance. Although it is commonly stated that a high work-function difference ( Δ φ ) between the metal electrodes is responsible for high f ASYM and f NL , [ 3 , 5 , 7 ]