Abstract
Abstract This paper presents the optimized design, fabrication and thermal characteristics of micro-heaters for thermal microelectromechanical system (MEMS) applications using Si-on-insulator (SOI) membrane and trench structures. The micro-heaters are based on a thermal measurement principle and contain thermal isolation regions of 10 μm thick Si membranes consisting of oxide-filled trenches in the SOI membrane rim. The micro-heaters were fabricated with Pt-RTD on the same substrate via the MgO buffer layer between the Pt thin-film and SiO2 layer. The thermal characteristics of micro-heaters with trench-free SOI membrane structure was 280 °C at an input power 0.9 W; and in the presence of 10 trenches, it was 580 °C due to the reduction of the external thermal loss. Therefore, a micro-heater with trenches in the SOI membrane rim structure provides a powerful and versatile alternative technology for enhancing the performance of micro-thermal sensors and actuators.
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