Abstract
In this work, Mg-doped ε-Ga2O3 (3.38 cation % of Mg) solar-blind photodetector is fabricated by using radio-frequency magnetron sputtering and metal-organic chemical vapor deposition methods on sapphire substrate. The results show that the Mg-doped ε-Ga2O3 thin film solar-blind photodetector exhibit a photo-to-dark current ratio of 1.68×102, responsivity of 77.2 mA/W, specific detectivity of 2.85×1012 Jones, and external quantum efficiency of 37.8% at 5 V under 40 μW/cm2 254 nm ultraviolet light illumination, as well as the stable light switching property driven by different applied voltages and light intensities. The achieved Mg-doped ε-Ga2O3 solar-blind photodetector is promised to advance relevant developments of the metastable Ga2O3 optoelectronic devices.
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