Abstract
Barium Hexaferrite (BaM) is an extensively studied magnetic material due to its potential device application. In this paper, we study Schottky junction diodes fabricated using gold and BaM and demonstrate the function of a spintronic device. Gold (50 nm)/silicon substrate was used to grow the BaM thin films (100-150 nm) using pulsed laser deposition. I-V characteristics were measured on the Au/BaM structure sweeping the voltage from ±5 volts. The forward and reverse bias current-voltage curves show diode like rectifying characteristics. The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the BaM based Schottky junction diodes can be tuned by external magnetic field. It is also demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz. In addition, it is found that above 1 MHz, Au/BaM diode can work as a rectifier as well as a capacitor filter, making the average (dc) voltage much larger.
Highlights
Hexagonal ferrites are very attractive materials, and widely used in permanent magnets, highdensity magnetic recording media, microwave devices, radio-frequency circuits
The threshold voltage decreases while the output current increases with increase in the applied external magnetic field showing that the I-V characteristics of the Barium Hexaferrite (BaM) based Schottky junction diodes can be tuned by external magnetic field
It is demonstrated that, the fabricated Schottky diode can be used as a half-wave rectifier, which could operate at high frequencies in the range of 1 MHz compared to the regular p-n junction diodes, which rectify below 10 kHz
Summary
Hexagonal ferrites are very attractive materials, and widely used in permanent magnets, highdensity magnetic recording media, microwave devices, radio-frequency circuits. They are divided into six different types: M-(AFe12O19), W-(AMe2Fe16O27), X-(A2Me2Fe28O46), Y-(A2Me2Fe12O22), Z-(A3Me2Fe24O41) and U-(A4Me2Fe36O60) where A = Ba, Sr, La and Me (a bivalent transition metal). I-V (current-voltage) characteristics of the device were measured in both the forward bias state, where the Au acts as a positive and BaM acts as a negative bias, and in the reversed biased state, where the roles of Au and BaM are reversed Both low and high frequency signals were applied at the inputs of the device, and the AC sinusoidal voltage outputs were recorded and compared with the commercial Si p-n junction diode.
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