Abstract
Indium-tin-oxide (ITO) thin film resistance temperature detectors (RTD) were fabricated on alumina substrates by RF sputtering in this study. The scanning electron microscope (SEM) images show that the thin film was smooth and dense. The ICP test shows that the ITO has an In 2 O 3 /SnO 2 weight ratio of 9.76. ITO film was an In 2 O 3 crystal structure with a preferred orientation of (440) for the as-deposited film and showed a preferred orientation of (222) after annealing at 850°C. High temperature tests revealed that the RTD had a negative temperature coefficient of resistance (TCR) of −2313 ppmoC-1 from room temperature to 400°C and a positive TCR of 3552 ppmoC−1 at the temperature of 400–600°C. While at the range of 600–900°C the TCR turned to be −2152 ppm°C−1.
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