Abstract
We fabricated nanowire light-emitting diodes (LEDs) using InP nanowires (NWs). Indium phosphide NWs with axial p–n junction were grown by selective-area metalorganic vapor phase epitaxy. The results of secondary-electron-microscopy (SEM) observation and photoluminescence measurement showed the formation of wurtzite InP NWs with some mixture of zincblende crystal phase, as expected from the used growth conditions. NW-LEDs were fabricated by sputtering indium tin oxide (ITO) after a planarization process for the top contact and AuZn evaporation for the backside contact. Current–voltage characterisitics showed clear rectifying characteristics with a small leakage current, and fairly linear current–light output characteristics were observed. By designing the pitch of the NW array, emission from individual NWs was confirmed, which opens the possibility for realizing a single NW-LED applicable to single-photon emitters.
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