Abstract
In this paper, we report successful fabrication and characterization of InGaN/GaN MQWs based blue LEDs on c-plane sapphire substrate. The epitaxial material used in the fabrication of blue LEDs was grown by metal-organic-chemical vapor deposition (MOCVD) system. The threshold voltage (Vth) of fabricated InGaN/GaN MQWs blue LED on c-plane sapphire substrate was ~ 3.1 V.
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