Abstract
In this study, the In0.9Ga0.1O sensing membrane were deposited by using the RF magnetron sputtering at room temperature and combined with commercial MOSFETs as the extended gate field effect transistor (EGFET) pH sensors. The sensing performance of the In0.9Ga0.1O EGFET pH sensors were measured and analyzed in the pH value of range between 2 to 12. In the saturation region, the pH current sensitivity calculated from the linear relationship between the IDS and pH value was approximately 56.64 μA/pH corresponding to the linearity of 97.8%. In the linear region, the pH voltage sensitivity exhibited high sensitivity and linearity of 43.7 mV/pH and 96.3%, respectively. The In0.9Ga0.1O EGFET pH sensors were successfully fabricated and exhibited great linearity. The analyzed results indicated that the In0.9Ga0.1O was a robust material as a promising sensing membrane and effectively used for pH sensing detection application.
Highlights
The pH sensors have widely attracted attention and been used for biological and chemical applications, such as biosensors [1,2,3], the medical community [4,5,6], and clinical measurements [7]
Instead of the sensing region separated from the FET and connected through a wire, the extended gate field-effect transistor (EGFET) has the following advantages over ion-sensitive field-effect transistor (ISFET), such as the transistor could be reused, the extended gate contact to the sensing membrane through the wire could reduce the risk of ESD damaging the transistor, and the light-induced damage of the devices can be reduced [14]
We investigated the characteristics of the material and the device application of EGFETs fabricated by the indium gallium oxide (InGaO) alloy deposited by radio frequency (RF) magnetron sputtering
Summary
The pH sensors have widely attracted attention and been used for biological and chemical applications, such as biosensors [1,2,3], the medical community [4,5,6], and clinical measurements [7]. Indium gallium oxide (InGaO) was found to be a robust material as a promising sensing membrane due to its inherent properties, including wide bandgap, and can be deposited at room temperature [21,22]. Indium gallium oxide (InGaO) has been used in various applications, such as thin-film transistors (TFT) [23], electrolyte–insulator– semiconductor [24], and solar-blind photodetectors [22] Among these device applications, the InGaO thin-film transistors were based on their high stability and field-effect mobility, and the solar-blind photodetector has the advantage of adjustable broadened detection range between 3.5 eV to 4.9 eV. The InGaO extended gate field-effect transistor (EGFET) has never been published in previous literature, even though InGaO is a robust material for using as a sensing membrane.
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