Abstract
Highly doped suspended silicon wires are fabricated on a silicon-on-insulator (SOI) wafer. The fabrication is based on a three-mask process which uses only standard photolithography, wet etching, and thermal treatments. The starting material was highly doped by means of the spin-on-dopant technique and wires with dimensions in the nanometer range were obtained. Preliminary results about two-probe measurements of the I– V characteristics and a noise analysis of undamaged and damaged wires are presented and discussed.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
