Abstract
This research produced high-quality, single-phase nickel titanate (NiTiO3 )t hin fi lms, ah igh-k material for gate dielectrics, by a modified sol–gel method. The precursor was prepared by reactions of nickel acetate tetrahydrate and titanium isopropoxide in 2-methoxyethanol with a 1:1 ratio of Ni/Ti in the solution. After coating, the films were post-heat treated between 5001 and 9001C. X-ray diffraction indicated that the films deposited at and above 6001C were single-phase nickel titanate. X-ray photoelectron spectra of a typical thin film revealed that the binding energies of Ni 2p3/2 and Ti 2p3/2 electrons were 855.2 and 457.7 eV, respectively. Raman spectra showed eight absorptions between 200 and 800 cm � 1 . Scanning electron microscope images showed smooth surfaces. Findings showed the dielectric constant of the NiTiO3 film to be 41.36 by capacitance–voltage analysis. The results show that single-phase NiTiO3 film can be prepared by the sol–gel spin coating method and then heat-treated at 6001C.
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