Fabrication and characterization of high g-force, silicon piezoresistive accelerometers

Abstract

Abstract A high g-force, cantilever beam type accelerometer has been fabricated using silicon micromachining and diffusion techniques. The fabricated devices have been subjected to static and shock tests up to 10 000g. High g-force tests up to 100 000g were also performed on a selected number of devices using a Hopkinson's bar. The design modeling procedures and results are reported and the fabrication steps are described. Experimental results on sensitivity, linearity and resonance frequency are presented and compared with the theoretical values. The temperature dependence of the sensitivity is also determined and is described in detail. The devices are capable of performing up to 100 000g, have an average measured sensitivity of 0.72 μV g−1 with a 5 V bridge excitation voltage, and resonance frequencies greater than 100 kHz.