Fabrication and Characterization of GaN-Based Micro-LEDs on Silicon Substrate**Supported by the National Key Research and Development Program of China under Grant No 2016YFB0400100, the National Natural Science Foundation of China under Grant Nos 61674076, 61674081 and 61605071, the Natural Science Foundation of Jiangsu Province under Grant Nos BY2013077, BK20141320 and BE2015111, the Six Talent Peaks Project of Jiangsu Province under

Abstract

GaN-based micro light emitting diodes (micro-LEDs) on silicon (Si) substrates with 40 μm in diameter are developed utilizing standard photolithography and inductively coupled plasma etching techniques. From current-voltage curves, the relatively low turn-on voltage of 2.8 V and low reverse leakage current in the order of 10−8 A/cm2 indicate good electrical characteristics. As the injection current increases, the electroluminescence emission wavelength hardly shifts at around 433 nm, and the relative external quantum efficiency slightly decays, because the impact of quantum-confined Stark effect is not serious in violet-blue micro-LEDs. Since GaN-LEDs are cost effective on large-area Si and suitable for substrate transfer or vertical device structures, the fabricated micro-LEDs on Si should have promising applications in the fields of high-resolution display and optical communication.