Abstract
This letter presents the fabrication and characterization of flexible microwave p-intrinsic-n diodes on a plastic substrate employing single-crystal germanium (Ge) nanomembranes. The fabricated flexible device displays high frequency response (e.g., insertion loss smaller than 1.5 dB and isolation larger than 10 dB at frequencies up to 10 GHz). Flexible Ge diodes with various diode structures are modeled and reveal radio frequency (RF) performance tradeoff with device parameters. Furthermore, the flexible Ge diodes show better RF/microwave properties than the flexible Si diodes. The study demonstrates great potential of using flexible active/passive components based on single-crystal Ge nanomembrane for high-performance RF/microwave applications.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
