Fabrication and characterization of field-effect transistors with suspended-nanowire channels

Abstract

Novel field-effect transistors (FETs) configured with suspended-nanowire (NW) channels were fabricated and characterized. Owing to the small aspect ratio of the etched structure, a simple wet etching process was adopted to release the NW channels. Our results show that the stiction issue can be eliminated as the channel length is sufficiently short or the air gap is sufficiently thick. In addition, the specific trends in pull-in and pull-out voltages as well as subthreshold swing (SS) with varying air gap thicknesses were investigated in terms of hysteresis characteristics. Finally, the devices were shown to withstand more than 500 cycles of operation in the cycling tests with repeatable hysteresis characteristics.