Abstract
Well-ordered Ag2S/Ag nanodot arrays with a density of >60 Gbit/in.2 have been fabricated by sputtering Ag on a silicon substrate using ultrathin porous anodic aluminum oxide membranes as shadow masks, followed by sulfurization treatment at room temperature. The morphology, microstructure, and electrical properties of the as-prepared nanodots were characterized by scanning electron microscopy, x-ray diffractometry, transmission electron microscopy, and conductive atomic force microscopy, respectively. Well-defined resistive switching behavior was observed in these nanodots, and the ON/OFF ratio was found to be higher than 102. The Ag2S/Ag nanodot arrays hold substantial promise for use as ultrahigh density nonvolatile memory devices.
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