Abstract
Our aim was to produce EUV multilayer mirrors with a small spectral bandwidth ΔE≤3 eV at 70 eV peak energy using UHV electron beam evaporation by varying the thickness ratio (Γ=\(\)) between the absorber layer and the bilayer. The deposition process was controlled by in situ soft X-ray reflectometry, and ion-beam polishing as well as substrate-heating methods were applied to reduce the interface roughness. The reflection properties of the Mo–Si multilayer mirrors prepared were characterized by hard and soft X-ray reflectometry and details of the multilayer structure were revealed from cross-sectional transmission electron microscopy.
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