Fabrication and Characterization of Double- and Single-Clamped CuO Nanowire Based Nanoelectromechanical Switches.

Liga Jasulaneca,Matiss M Ramma,Donats Erts,Jelena Kosmaca,Alexander I Livshits,Juris Prikulis,Raitis Sondors,Raimonds Meija,Daniels Jevdokimovs

doi:10.3390/nano11010117

Abstract

Electrostatically actuated nanoelectromechanical (NEM) switches hold promise for operation with sharply defined ON/OFF states, high ON/OFF current ratio, low OFF state power consumption, and a compact design. The present challenge for the development of nanoelectromechanical system (NEMS) technology is fabrication of single nanowire based NEM switches. In this work, we demonstrate the first application of CuO nanowires as NEM switch active elements. We develop bottom-up and top-down approaches for NEM switch fabrication, such as CuO nanowire synthesis, lithography, etching, dielectrophoretic alignment of nanowires on electrodes, and nanomanipulations for building devices that are suitable for scalable production. Theoretical modelling finds the device geometry that is necessary for volatile switching. The modelling results are validated by constructing gateless double-clamped and single-clamped devices on-chip that show robust and repeatable switching. The proposed design and fabrication route enable the scalable integration of bottom-up synthesized nanowires in NEMS.

Highlights

The nanoelectromechanical (NEM) switch stands out as an energy-efficient candidate for logic and memory applications, due to two most important characteristics of mechanical switching: well-defined ON and OFF states and zero OFF state current [1,2,3], making it the ideal switch
DEPSwitch alignment, the as-fabricated chips were immersed inThe a nanowire-isopropanol suspension, applying signaltested with in frequency of conNEM switches that were fabricated in this work were two different
Switch-OFF voltage VOFF was registered when the sum of FE and adhesion force FA in the contact became smaller than elastic tension force Fx in the nanowire and electric current fell to the current noise floor

Summary

Introduction

The nanoelectromechanical (NEM) switch stands out as an energy-efficient candidate for logic and memory applications, due to two most important characteristics of mechanical switching: well-defined ON and OFF states and zero OFF state current [1,2,3], making it the ideal switch. The operation and properties of NEM switches can be experimentally explored by two approaches: using nanomanipulations in situ inside transmission [5,6,7,8,9] or scanning [10,11,12]. The ability of rapid adjustment of the NEM switch configuration is an advantage of the in situ electron microscopy approach while using nanomanipulations [10,11,12], which allows for exploring different working regimes without the repetitive nanofabrication of multiple devices. In situ characterization inside TEM and SEM have allowed for the determination of the mechanical properties of NEM switch active elements, such as Young’s modulus [5,19,20,21], breaking strength [5], and resonant behavior [21,22]

Methods

Results

Conclusion